The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2003
Filed:
Mar. 29, 2001
Masahiro Minegishi, Aichi, JP;
Yasushi Shimogaichi, Kanagawa, JP;
Makoto Takatoku, Kanagawa, JP;
Hisao Hayashi, Aichi, JP;
Sony Corporation, Tokyo, JP;
Abstract
For manufacturing a thin film semiconductor device, first conducted is a film-making step to make a non-single-crystalline semiconductor thin film ( ) on an insulating substrate ( ). Next conducted is an annealing step to irradiate laser light ( ) for once heating and melting the non-single-crystalline semiconductor thin film ( ) and then changing it into a polycrystal in its cooling process. Thereafter, a processing step is conducted to form thin film transistors in an integrated form, which includes the polycrystalline semiconductor thin film ( ) as their active layer. For the purpose of ensuring uniform crystallization and enlargement of grain sizes, in the annealing step, by using a laser oscillator ( ) including an excimer laser source, the laser light ( ) having a pulse width not shorter than 50 ns is shaped by an optical system ( ) to form a rectangular cross-sectional area whose sides are not shorter than 10 mm to sequentially irradiate the semiconductor thin film ( ).