The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2002
Filed:
Nov. 03, 1999
Sony Corporation, Tokyo, JP;
Abstract
An LDD structure of a thin film transistor for pixel switching is realized on a large glass substrate by low-temperature processes. A thin film semiconductor device for display comprises a display part and a peripheral driving part formed on a glass substrate ( ). Pixel electrodes ( ) and NchLDD-TFTs are arranged in a matrix in the display part. Thin film transistor PchTFTs and NchTFTs which constitute circuit elements are formed in the peripheral driving part. Each thin film transistor consists of a gate electrode ( ), an insulating film ( ) formed on the gate electrode ( ), a polycrystalline semiconductor layer ( ) formed on the insulating layer ( ), and a high concentration impurity layer constituting a source ( ) and a drain ( ) formed on the polycrystalline semiconductor layer ( ). Further, an NchLDD-TFT thin film transistor for switching has an LDD structure in which a low concentration impurity layer ( ) is interposed between the polycrystalline semiconductor layer ( ) and the high concentration impurity layer ( ).