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For the Inventor, By the Inventor

Itami, Japan

Hiroyasu Hagino

This inventor holds 16 USPTO granted patents. Top assignee: Mitsubishi Denki Kabushiki Kaisha. Active years: 1976-1996.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroyasu Hagino. Retrieved from https://idiyas.com/inventor/hiroyasu-hagino

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 16

% Patents Active = 100.0

Average Co-Inventor Count = 1.3

ph-index = 10

Forward Citations = 185(Granted Patents)


Location History:

  • Itami, JA (1976 - 1977)
  • Nishinomiya, JP (1987)
  • Itami, JP (1985 - 1995)
  • Fukuoka, JP (1994 - 1996)

Company Filing History:

goldMedal16 out of 21,351 
 
Mitsubishi Denki Kabushiki Kaisha
 patents

Years Active: 1976-1996

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16 patents (USPTO):Explore Patents
1. 5489788 - Insulated gate semiconductor device with improved short-circuit tolerance (1996-02-06),
2. 5451531 - Method of fabricating an insulated gate semiconductor device (1995-09-19),
3. 5391898 - Insulated gate bipolar transistor having high short-circuit and latch-up (1995-02-21),
4. 5380670 - Method of fabricating a semiconductor device (1995-01-10),
5. 5321281 - Insulated gate semiconductor device and method of fabricating same (1994-06-14),
6. 5304821 - MOS-gate-turnoff thyristor (1994-04-19),
7. 5171696 - Semiconductor device and method of manufacturing the same (1992-12-15),
8. 5170239 - Insulated gate bipolar transistor having high short-circuit SOA and high (1992-12-08),
9. 5086324 - Insulated gate bipolar transistor (1992-02-04),
10. 5084401 - Insulated gate bipolar transistor and method of manufacturing the same (1992-01-28),
11. 5023691 - Insulated gate bipolar transistor (1991-06-11),
12. 4990975 - Insulated gate bipolar transistor and method of manufacturing the same (1991-02-05),
13. 4662957 - Method of producing a gate turn-off thyristor (1987-05-05),
14. 4556898 - Semiconductor device (1985-12-03),
15. 4001873 - Semiconductor device (1977-01-04),

Title: Hiroyasu Hagino: Innovator in Semiconductor Technology

Introduction

Hiroyasu Hagino is a prominent inventor based in Itami, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 16 patents. His work focuses on improving the efficiency and reliability of insulated gate semiconductor devices.

Latest Patents

Hagino's latest patents include an insulated gate semiconductor device with improved short-circuit tolerance. This innovation suppresses losses while enhancing short-circuit and latch-up tolerance. By adjusting the sheet resistance of the n-type emitter region, he has achieved a reduction in saturation current and short-circuit tolerance without significantly affecting the collector-emitter saturation voltage. His method of fabricating an insulated gate semiconductor device also stands out, as it involves a high-concentration p-type semiconductor region that enhances performance while maintaining low losses.

Career Highlights

Hagino is associated with Mitsubishi Electric Corporation, where he has been instrumental in advancing semiconductor technologies. His work has led to significant improvements in device performance, making him a key figure in the industry.

Collaborations

Hagino has collaborated with notable colleagues such as Hiroshi Yamaguchi and Yoshifumi Tomomatsu, contributing to various projects that push the boundaries of semiconductor innovation.

Conclusion

Hiroyasu Hagino's contributions to semiconductor technology have established him as a leading inventor in the field. His innovative patents and collaborations continue to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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