The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 1992
Filed:
Nov. 20, 1991
Hiroyasu Hagino, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
The present invention direct to a semiconductor device and a method of manufacturing the same. According to the semiconductor device of the present invention, a first region is partially formed on a major surface of a semiconductor substrate so as to have the opposite conductivity to the first region, and an electrode is formed on the major surface. A barrier layer may be formed between the region adjacent to the first region of the semiconductor substrate and the electrode in order to reduce a current flowing in a parasitic diode. Or, an area of a connecting part between the first region and the electrode may be set to be larger than that of a connecting part between the region adjacent to the first region of the semiconductor substrate and the electrode in order to reduce a current flowing in a parasitic diode. Or, both of technique mentioned above may be combined to reduce a current flowing in a parasitic diode. Thus, it is possible to provide a semiconductor device which can be fit for high-frequency use.