The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 1992
Filed:
Dec. 17, 1990
Hiroyasu Hagino, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A P-type base region, which is formed on an N-type body layer, as a relatively deep first base region and a relatively shallow second base region. An N.sup.+ -type emitter region is formed on the base region. A portion of the surface of the second base region between surfaces of the emitter region and body layer is defined as a channel. A gate oxide film, on which a gate electrode is formed, is provided on the channel. The amount and depth of introduction of an impurity in the second base region is about 2.times.10.sup.14 to 5.times.10.sup.14 cm.sup.-2 and 4 to 10 .mu.m, respectively. The thickness of the gate oxide film is about 600 to 1000 .ANG.. Thus, an IGBT is implemented, which can ensure sufficient pulse energization ability while causing no latch-up in application to a stroboscope circuit.