The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 1987
Filed:
Apr. 22, 1985
Hiroyasu Hagino, Nishinomiya, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of producing a gate turn-off thyristor includes producing a first n type impurity region, a second p type impurity region, a third n type impurity region, and a fourth p type impurity region produced in a semiconductor substrate providing a cathode electrode in contact with the first n type impurity region, providing a gate electrode in contact with the second p type impurity region, and an anode electrode which short-circuits the third and the fourth regions at the second main surface of the semiconductor substrate. Gold is diffused into the third region at a predetermined diffusion temperature thereby shortening the life time of carriers in the substrate.