Nagoya, Japan

Hiroshi Muto


Average Co-Inventor Count = 5.1

ph-index = 7

Forward Citations = 296(Granted Patents)


Company Filing History:


Years Active: 2000-2007

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13 patents (USPTO):Explore Patents

Title: Hiroshi Muto: Innovator in Semiconductor Technology

Introduction

Hiroshi Muto is a prominent inventor based in Nagoya, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 13 patents. His innovative approaches have paved the way for advancements in manufacturing processes and device functionality.

Latest Patents

Muto's latest patents include a method for manufacturing a movable portion of a semiconductor device. This method involves forming a trench on a semiconductor layer that reaches an insulation layer, followed by etching the sidewall of the trench to create a movable portion. The process utilizes a reactive ion etching method, ensuring that the insulation layer at the bottom of the trench is not positively charged during the trench formation. Another notable patent is for a semiconductor device and method for producing the same by dicing. This method involves bonding a semiconductor wafer to a protective sheet, which is then cut into semiconductor chips along grooves, preventing contamination from scraps.

Career Highlights

Hiroshi Muto is currently employed at Denso Corporation, where he continues to innovate in semiconductor technology. His work has been instrumental in enhancing the efficiency and reliability of semiconductor devices.

Collaborations

Muto has collaborated with notable colleagues such as Tsuyoshi Fukada and Minekazu Sakai, contributing to various projects that have furthered the field of semiconductor technology.

Conclusion

Hiroshi Muto's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in the field, showcasing the importance of innovation in technology.

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