The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2001
Filed:
May. 06, 1999
Hiroshi Muto, Nagoya, JP;
Tsuyoshi Fukada, Aichi-gun, JP;
Masakazu Terada, Chiryu, JP;
Hiroshige Sugito, Nagoya, JP;
Masakazu Kanosue, Nagoya, JP;
Shinji Yoshihara, Nagoya, JP;
Shoji Ozoe, Nukata-gun, JP;
Seiji Fujino, Toyota, JP;
Minekazu Sakai, Kariya, JP;
Minoru Murata, Kariya, JP;
Yukihiro Takeuchi, Nishikamo-gun, JP;
Seiki Aoyama, Toyohashi, JP;
Toshio Yamamoto, Ama-gun, JP;
Kazushi Asami, Okazaki, JP;
Denso Corporation, Kariya, JP;
Abstract
In a method for manufacturing a semiconductor acceleration sensor, a movable portion including a mass portion and movable electrodes is formed in a single crystal silicon thin film provided on a silicon wafer through an insulation film by etching both the single crystal silicon thin film and the silicon wafer. In this case, the movable portion is finally defined at a movable portion defining step that is carried out in a vapor phase atmosphere. Accordingly, the movable portion is prevented from sticking to other regions due to etchant during the manufacture thereof.