The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2007
Filed:
Sep. 09, 2004
Kazushi Asami, Okazaki, JP;
Junji Oohara, Nisshin, JP;
Hiroshi Muto, Nagoya, JP;
Kazuhiko Sugiura, Nagoya, JP;
Tsuyoshi Fukada, Aichi-gun, JP;
Yukihiro Takeuchi, Nishikamo-gun, JP;
Kazushi Asami, Okazaki, JP;
Junji Oohara, Nisshin, JP;
Hiroshi Muto, Nagoya, JP;
Kazuhiko Sugiura, Nagoya, JP;
Tsuyoshi Fukada, Aichi-gun, JP;
Yukihiro Takeuchi, Nishikamo-gun, JP;
Denso Corporation, Kariya, JP;
Abstract
A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.