The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2005
Filed:
May. 30, 2003
Hiroshi Muto, Nagoya, JP;
Tsuyoshi Fukada, Aichi-ken, JP;
Kenichi AO, Tokai, JP;
Minekazu Sakai, Kariya, JP;
Yukihiro Takeuchi, Aichi-ken, JP;
Kazuhiko Kano, Toyoake, JP;
Junji Oohara, Nisshin, JP;
Hiroshi Muto, Nagoya, JP;
Tsuyoshi Fukada, Aichi-ken, JP;
Kenichi Ao, Tokai, JP;
Minekazu Sakai, Kariya, JP;
Yukihiro Takeuchi, Aichi-ken, JP;
Kazuhiko Kano, Toyoake, JP;
Junji Oohara, Nisshin, JP;
Denso Corporation, Kariya, JP;
Abstract
A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.