Neyagawa, Japan

Hiroshi Iwata

This inventor holds 19 USPTO granted patents, primarily in Photovoltaic Technology. Top assignees: Sanyo Electric Co., Ltd., Tanabe Seiyaku Company, Limited. Active years: 1992-1998.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroshi Iwata. Retrieved from https://idiyas.com/inventor/hiroshi-iwata-hewac7nj

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.5

ph-index = 13

Forward Citations = 504(Granted Patents)


Location History:

  • Osaka, JP (1992 - 1995)
  • Neyagawa, JP (1992 - 1998)

Company Filing History:


Years Active: 1992-1998

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Areas of Expertise:
Photovoltaic Device
Crystalline Silicon
Thin Film Transistor
Phototransistor
Naphthyloxazolidone Derivatives
Semiconductor Fabrication
Solar Cell
Polycrystalline Manufacturing
Scanning Image Sensor
Internal Stress Relief
Semiconductor Device
19 patents (USPTO):Explore Patents

Title: Hiroshi Iwata - Innovator in Photovoltaic Technology

Introduction

Hiroshi Iwata is a prominent inventor hailing from Neyagawa, Japan. With an impressive portfolio of 19 patents, his contributions primarily focus on advancements in photovoltaic devices, enhancing the efficiency and capabilities of light energy conversion.

Latest Patents

Among his innovative work, Iwata's latest patents include a groundbreaking photovoltaic device which integrates a transparent electrode, several types of semiconductors, and a metal electrode. This device features a first semiconductor junction made up of one conductive type amorphous semiconductor and another conductive type crystal semiconductor, as well as a second semiconductor junction comprising another conductive type amorphous semiconductor. The meticulous arrangement of these components, including the placement of electrodes on either side of the semiconductor, aims to optimize light absorption and energy conversion efficiency. Another notable patent relates to a semiconductor device that utilizes a substrate made from low-grade silicon, with a highly pure silicon layer on top, further exposing the potential for cost-effective semiconductor manufacturing.

Career Highlights

Hiroshi Iwata's career spans various leading industries, including significant tenures at Sanyo Electric Co., Ltd. and Tanabe Seiyaky Co., Ltd. His work in these companies has positioned him as a key player in the development of next-generation semiconductor technologies that contribute to sustainable energy solutions.

Collaborations

In his journey, Iwata has collaborated with fellow innovators like Shigeru Noguchi and Keiichi Sano. These collaborative efforts have facilitated knowledge exchange and led to numerous advancements within the realm of photovoltaic technologies, underlining the importance of teamwork in innovation.

Conclusion

Hiroshi Iwata’s dedication to refining photovoltaic devices showcases his commitment to sustainability through innovation. His significant contributions and collaborations not only highlight his expertise but also set a solid foundation for future advancements in the field of renewable energy technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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