The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 06, 1994

Filed:

Nov. 23, 1992
Applicant:
Inventors:

Shigeru Noguchi, Hirakata, JP;

Hiroshi Iwata, Neyagawa, JP;

Keiichi Sano, Takatuki, JP;

Assignee:

Sanyo Electric Co., Ltd., Moriguchi, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
136259 ; 136256 ; 136258 ; 257436 ; 257458 ; 257466 ;
Abstract

A photovoltaic device including a substrate, a first electrode layer provided on the substrate, a photoelectric conversion layer provided on the first electrode, and a second electrode layer provided on the photoelectric conversion layer. A discontinuous interfacial layer is provided at at least one of the interfaces between a first conductivity type layer and a photoactive layer provided in the photoelectric conversion layer, between the photoactive layer and a second, opposite conductivity type layer of the photoelectric conversion layer, and between the photoelectric conversion layer and the second electrode layer. The at least one interface provided with the discontinuous interfacial layer may be so textured that portions of the interface not provided with interfacial layers project toward the substrate.


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