The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 1993

Filed:

Sep. 10, 1991
Applicant:
Inventors:

Shigeru Noguchi, Hirakata, JP;

Hiroshi Iwata, Neyagawa, JP;

Keiichi Sano, Takatsuki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
136255 ; 136258 ; 136261 ; 257458 ;
Abstract

A photovoltaic device includes a monocrystalline or polycrystalline semiconductor layer of one conductivity type, a substantially intrinsic substantially amorphous semiconductor layer having a predetermined thickness small enough to avoid producing carriers therein. The substantially intrinsic, substantially amorphous layer is formed on the one conductivity type semiconductor layer, and a substantially amorphous semiconductor layer of the opposite conductivity type is formed on the intrinsic, semiconductor layer.


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