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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5231297 B1

PDFFull Text
Date of Patent:
Jul. 27, 1993

Filed:

Jan. 07, 1992

Thin film transistor

Applicant:
Inventors:

Shoichiro Nakayama, Moriguchi, JP;

Shigeru Noguchi, Hirakata, JP;

Keiichi Sano, Takatsuki, JP;

Hiroshi Iwata, Neyagawa, JP;

Hiroyuki Kuriyama, Mino, JP;

Assignee:

Sanyo Electric Co., Ltd., Osaka, JP;

Attorney:

Darby & Darby

Primary Examiner:

Sara W Crane

Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 77 ; 257 65 ; 257 66 ; 257192 ;
Abstract

A thin film transistor with a noncrystalline semiconductor film, wherein an amorphous semiconductor in a position corresponding to a channel between a source electrode and a drain electrode is polycrystallized, while on both side areas or around the polycrystallized area remains amorphous. The thin film transistor may be a noncrystalline semiconductor film with a heterojunction between a channel area and a source and drain area.

Find Patent Forward Citations

Nakayama, Shoichiro. (1993). Thin film transistor (U.S. Patent No. 5231297). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5231297

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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