The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 1995

Filed:

Nov. 12, 1993
Applicant:
Inventors:

Shigeru Noguchi, Hirakata, JP;

Hiroshi Iwata, Neyagawa, JP;

Keiichi Sano, Moriguchi, JP;

Assignee:

Sanyo Electric Co., Ltd., Moriguchi, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
136255 ; 136256 ; 136258 ; 136261 ; 257431 ; 257458 ; 257465 ;
Abstract

A photovoltaic device includes an i-type amorphous silicon thin film and a p-type amorphous silicon thin film arranged on portions of an n-type crystalline silicon substrate, a collecting electrode arranged on the amorphous silicon thin film, and an insulating layer arranged around the portions where the amorphous silicon thin film is formed. Thus, a pin junction is formed only below the collecting electrode.


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