Ibaraki, Japan

Hirohito Miyashita

This inventor holds 20 USPTO granted patents and 3 EPO patents, primarily in Sputtering Targets. Top assignees: Jx Nippon Mining Metals Corporation, Nikko Materials Company, Limited, Nippon Mining & Metals Co., Ltd.. Active years: 2003-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hirohito Miyashita. Retrieved from https://idiyas.com/inventor/hirohito-miyashita

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 90.0

 

Average Co-Inventor Count = 2.2

ph-index = 8

Forward Citations = 164(Granted Patents)


Location History:

  • Ibaraki-ken, JP (2004)
  • Ibaraki, JP (2003 - 2020)

Company Filing History:


Years Active: 2003-2020

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Areas of Expertise:
Copper Alloy
Sputtering Target
Hafnium Alloy
Nickel Alloy
Electrolytic Plating
Cobalt Target
Tantalum Target
Tungsten Target
Backing Plate
Deposition System
Production Method
Semiconductor Wiring
20 patents (USPTO):Explore Patents

Title: Hirohito Miyashita: Innovator in Semiconductor Materials

Introduction: Hirohito Miyashita, a distinguished inventor from Ibaraki, Japan, has made significant contributions to the field of semiconductor materials. With an impressive portfolio of 20 patents, his work primarily focuses on copper alloy sputtering targets, which are crucial for advancing semiconductor technologies.

Latest Patents: Among his latest inventions, Miyashita has developed innovative copper alloy sputtering targets that enhance the performance of semiconductor element wiring. His first patent discloses a copper alloy sputtering target consisting of 0.5 to 4.0 wt % of aluminum and minimal silicon content, designed to ensure the formation of a stable seed layer during electrolytic copper plating. Furthermore, he has introduced a second sputtering target that includes tin with reduced manganese content. These targets are engineered to maintain excellent sputtering film formation characteristics, benefiting the semiconductor industry significantly.

In another noteworthy patent, he presents a copper alloy sputtering target specifically tailored for semiconductor device interconnections. This target contains between 0.4 to 5 wt % of tin and is noted for its high resistivity of 2.2 μΩcm or more, enabling reliable and uniform seed layer formation during copper electroplating.

Career Highlights: Hirohito Miyashita's professional journey includes valuable tenures at prominent companies such as JX Nippon Mining & Metals Corporation and Nikko Materials Company, Limited. His roles at these organizations have provided him with a robust platform to innovate and develop cutting-edge technology in semiconductor materials.

Collaborations: Throughout his career, Miyashita has collaborated with esteemed colleagues, including Takeo Okabe and Yasuhiro Yamakoshi. These partnerships have further enhanced his research capabilities and allowed for the exchange of innovative ideas within the field.

Conclusion: Hirohito Miyashita's work in developing copper alloy sputtering targets demonstrates his commitment to innovation in semiconductor technology. His patents not only contribute to improved manufacturing processes but also pave the way for advancements in electronic devices. As the semiconductor industry continues to evolve, the impact of his inventions is likely to be felt for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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