The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2006
Filed:
Jul. 11, 2002
Takeo Okabe, Ibaraki, JP;
Akihiro Aiba, Ibaraki, JP;
Junnosuke Sekiguchi, Ibaraki, JP;
Hirohito Miyashita, Ibaraki, JP;
Ichiroh Sawamura, Ibaraki, JP;
Takeo Okabe, Ibaraki, JP;
Akihiro Aiba, Ibaraki, JP;
Junnosuke Sekiguchi, Ibaraki, JP;
Hirohito Miyashita, Ibaraki, JP;
Ichiroh Sawamura, Ibaraki, JP;
Abstract
An electrolytic copper plating method characterized in employing phosphorous copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating upon making the crystal grain size of the phosphorous copper anode 10 to 1500 μm when the anode current density during electrolysis is 3 A/dmor more, and making the grain size of the phosphorous copper anode 5 to 1500 μm when the anode current density during electrolysis is less than 3 A/dm. The electrolytic copper plating method and phosphorous copper anode used in such electrolytic copper plating method is capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath, and is capable of preventing the adhesion of particles to a semiconductor wafer. A semiconductor wafer plated with the foregoing method and anode having low particle adhesion are provided.