This inventor holds 5 USPTO granted patents. Top assignee: Renesas Electronics Corporation. Active years: 2012-2023.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Kanagawa, JP (2012 - 2016)
- Koutou-ku, JP (2017)
- Tokyo, JP (2023)
Company Filing History:
Years Active: 2012-2023
Title: Hiroaki Mizushima: Innovator in Semiconductor Technology
Introduction
Hiroaki Mizushima is a prominent inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on improving the manufacturing processes and efficiency of semiconductor devices.
Latest Patents
Mizushima's latest patents include a method of determining the thickness of a memory gate electrode during device manufacture. This innovative method involves forming a stacked-layer body that includes a gate insulating film and a control gate electrode in both a product region and a scribe region. The process continues with the formation of a gate insulating film and a conductive film that covers the stacked-layer body. An etching process is then performed on the conductive film to create a measurement pattern in the scribe region. Following this, a memory gate electrode is formed by patterning the conductive film in the product region, and a silicide layer is formed on the upper surface of the memory gate electrode while the measurement pattern is covered by an insulating film. The resistance value of the measurement pattern is then measured, showcasing a novel approach to semiconductor manufacturing.
Another notable patent is related to a semiconductor device and the method of manufacturing it. In this patent, a memory cell region is defined within a semiconductor substrate, where a flash memory cell is formed. The floating gate electrode of the flash memory cell features a protruding portion that flares toward an erase gate electrode, enhancing the device's functionality. This design includes an inclined surface that faces the erase gate electrode with a tunnel oxide film in between, demonstrating Mizushima's innovative approach to semiconductor design.
Career Highlights
Hiroaki Mizushima is currently associated with Renesas Electronics Corporation, a leading company in semiconductor solutions. His work has significantly impacted the development of advanced semiconductor technologies, making him a key figure in the industry.
Collaborations
Mizushima has collaborated with notable colleagues, including Fumihiko Hayashi and Kounosuke Tateishi. Their combined expertise has contributed to the advancement of semiconductor technologies and innovations.
Conclusion
Hiroaki Mizushima's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His innovative methods and designs continue to shape the future of semiconductor manufacturing.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
