The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2012

Filed:

Sep. 01, 2009
Applicant:

Hiroaki Mizushima, Kanagawa, JP;

Inventor:

Hiroaki Mizushima, Kanagawa, JP;

Assignee:

Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/062 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device is proposed in which signal delay due to compensation capacitance elements in peripheral circuit element regions is eliminated. The semiconductor device includes: a first region including memory cells; a second regionincluding a functional circuit; cell capacitors formed in the first region; and compensation capacitance elementstoformed in the second region, wherein the compensation capacitance elementstoeach include a lower electrode, a capacitance insulating film, and an upper electrode, the lower electrode, capacitance insulating film, and upper electrodebeing the same as those of the cell capacitors, and wherein the compensation capacitance elements are formed over an upper layer of the second regionexcluding upper layer portions of drain diffusion layersor gate electrodesof transistors in the functional circuit.


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