The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2016
Filed:
Jun. 11, 2015
Renesas Electronics Corporation, Kanagawa, JP;
Hiroaki Mizushima, Kanagawa, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
A floating gate insulating film is formed in a first element formation region of a substrate. A first insulating film and a control gate electrode are continuously formed from the first element formation region to a first element isolation film. A selection gate insulating film and a selection gate electrode are formed in the substrate located in the first element formation region. The selection gate electrode is continuously formed over the first element isolation film. A side surface of the selection gate electrode is in contact with a first side surface of a floating gate electrode through a second insulating film. An upper surface of a region overlapping with the selection gate electrode in the first element isolation film is located lower than an upper surface of the substrate.