The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2017
Filed:
Aug. 26, 2016
Applicant:
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Inventor:
Hiroaki Mizushima, Koutou-ku, JP;
Assignee:
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 27/11534 (2017.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11534 (2013.01); H01L 29/42328 (2013.01);
Abstract
In a semiconductor substrate, a memory cell region in which a flash memory cell is formed is defined by an element isolation region. A floating gate electrode of the flash memory cell includes a protruding portion protruding toward an erase gate electrode so as to flare from a portion located immediately below a control gate electrode. Protruding portion includes an end face of a height corresponding to a thickness, and an inclined surface continuous with end face. Protruding portion faces erase gate electrode with a tunnel oxide film interposed therebetween.