Hiroaki Honjou

This inventor holds 10 USPTO granted patents and 1 published patent application. Top assignees: Nec Corporation, Tohoku University. Active years: 2003-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroaki Honjou. Retrieved from https://idiyas.com/inventor/hiroaki-honjou

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 10 (Patent Applications = 1)

% Patents Active = 60.0

Average Co-Inventor Count = 4.1

ph-index = 6

Forward Citations = 120(Granted Patents)

Company Filing History:

where one patent can have more than one assignee

Years Active: 2003-2016

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10 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9478309 - Magnetic-domain-wall-displacement memory cell and initializing method therefor (2016-10-25),

2. 9406869 - Semiconductor device (2016-08-02),

3. 8908423 - Magnetoresistive effect element, and magnetic random access memory (2014-12-09),

4. 8300456 - Magnetic random access memory and method of manufacturing the same (2012-10-30),

5. 7372673 - Magnetoresistive effect transducer having longitudinal bias layer and control layer directly connected to free layer (2008-05-13),

6. 6950290 - Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer (2005-09-27),

7. 6798626 - Magnetoresistive effect element having a ferromagnetic tunnel junction film with an oxide or nitride of a metallic material (2004-09-28),

8. 6624987 - Magnetic head with a tunnel junction including metallic material sandwiched between one of an oxide and a nitride of the metallic material (2003-09-23),

9. 6542342 - Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer (2003-04-01),

10. 6538861 - MAGNETORESISTIVE HEAD HAVING FERROMAGNETIC TUNNEL JUNCTION FILM WITH A SMALLER RESISTANCE AT A TERMINAL PORTION THAN A CENTRAL PORTION, MAGNETIC RESISTANCE DETECTION SYSTEM WITH THE MAGNETORESISTIVE HEAD AND A MAGNETIC STORAGE SYSTEM USING IT (2003-03-25),

Title: Hiroaki Honjou: Innovator in Magnetic Memory Technology

Introduction

Hiroaki Honjou is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of magnetic memory technology, holding a total of 10 patents. His innovative work has paved the way for advancements in semiconductor devices and memory cells.

Latest Patents

One of Honjou's latest patents is the "Magnetic-domain-wall-displacement memory cell and initializing method therefor." This invention includes a magnetic domain wall displacement memory cell that features a recording layer with a magnetic film. The recording layer consists of a magnetization reversal region, where magnetization is reversible, and first and second magnetization fixed regions that supply a spin-polarized electron to the magnetization reversal region. The design allows for the formation of a region where magnetization reversal occurs due to a current flowing parallel to the film surface, alongside a magnetic field component in the same direction.

Another notable patent is for a "Semiconductor device," which comprises a first magnetic layer situated on a flat substrate surface, a second magnetic layer above the first, and a third thin film layer between them. This configuration is designed to maintain magnetic coupling between the first and second magnetic layers while avoiding any inhibition caused by the third layer's thickness.

Career Highlights

Hiroaki Honjou has worked with notable organizations such as NEC Corporation and Tohoku University. His experience in these institutions has contributed to his expertise in magnetic memory technologies and semiconductor devices.

Collaborations

Honjou has collaborated with esteemed colleagues, including Kazuhiko Hayashi and Masafumi Nakada. Their joint efforts have further advanced the research and development of innovative technologies in the field.

Conclusion

Hiroaki Honjou's contributions to magnetic memory technology and semiconductor devices have established him as a leading inventor in his field. His patents reflect a commitment to innovation and the advancement of technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

1 patent pending: