The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Apr. 24, 2013
Applicants:
Nec Corporation, Tokyo, JP;
Tohoku University, Sendai-shi, Miyagi, JP;
Inventors:
Assignees:
NEC CORPORATION, Tokyo, JP;
TOHOKU UNIVERSITY, Miyagi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract
A semiconductor device includes: a first magnetic layer () disposed on a flat substrate surface; a second magnetic layer () disposed above the first magnetic layer () and magnetically coupled to the first magnetic layer () by magnetostatic coupling or exchange coupling; and a third thin film layer () formed between the first magnetic layer () and the second magnetic layer (), the third thin film layer () having such a thickness as to avoid inhibiting the magnetic coupling between the first magnetic layer () and the second magnetic layer ().