The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2016
Filed:
Sep. 13, 2013
Nec Corporation, Tokyo, JP;
Tohoku University, Miyagi, JP;
Ryusuke Nebashi, Tokyo, JP;
Noboru Sakimura, Tokyo, JP;
Tadahiko Sugibayashi, Tokyo, JP;
Yukihide Tsuji, Tokyo, JP;
Ayuka Tada, Tokyo, JP;
Hiroaki Honjou, Tokyo, JP;
Hideo Ohno, Miyagi, JP;
NEC CORPORATION, Tokyo, JP;
TOHOKU UNIVERSITY, Miyagi, JP;
Abstract
Provided is a magnetic domain wall displacement memory cell, including a recording layer including a magnetic film, the recording layer including: a magnetization reversal region in which magnetization is reversible; and first and second magnetization fixed regions that supply a spin-polarized electron to the magnetization reversal region. The magnetic domain wall displacement memory cell is configured so that a first region in which magnetization reversal occurs due to a first current flowing in a direction parallel to a film surface of the recording layer and a first magnetic field component in the direction parallel to the film surface of the recording layer is formed, and a second region in which no magnetization reversal occurs is formed.