The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Oct. 22, 2007
Hiroaki Honjou, Tokyo, JP;
Tetsuhiro Suzuki, Tokyo, JP;
Norikazu Ohshima, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
An MRAM has a pinned layer and a magnetic recording layer connected to the pinned layer through a tunnel barrier layer. The magnetic recording layer has a first free layer, a second free layer being in contact with the tunnel barrier layer, and an intermediate layer provided between the first free layer and the second free layer. The first free layer includes a magnetization switching region whose magnetization direction can be switched by domain wall motion method. The second free layer has no domain wall. The intermediate layer is formed to cover at least the magnetization switching region. The magnetization switching region and the second free layer are magnetically coupled to each other through the intermediate layer.