Location History:
- Tachikawa, JP (1997)
- Akishima, JP (1993 - 1998)
- Hamura, JP (2005)
Company Filing History:
Years Active: 1993-2005
Title: Hidetomo Aoyagi: Innovator in Semiconductor Technology
Introduction
Hidetomo Aoyagi is a prominent inventor based in Akishima, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of six patents. His work focuses on improving the efficiency and functionality of semiconductor devices.
Latest Patents
Among his latest patents is a semiconductor device and a method of manufacturing the same, which features outside-cell wiring that extends the upper part of a macro cell in the direction of the X-axis. This design allows for the wiring layer to be composed of an upper layer than a terminal for a signal of the macro cell, which is formed to extend in the direction of the Y-axis. This innovation secures the outside-cell wiring for multiple wiring channels. Another notable patent is for a semiconductor memory device with an improved substrate arrangement. This device is designed to accommodate a large number of types of DRAMs with varying package specifications, bit structures, and operating modes. The bonding pads are strategically arranged to optimize space and improve access time, while additional features enhance the device's performance.
Career Highlights
Hidetomo Aoyagi has worked with leading companies in the semiconductor industry, including Hitachi, Ltd. and Hitachi Vlsi Engineering Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.
Collaborations
Throughout his career, Aoyagi has collaborated with notable colleagues such as Yoshihisa Koyama and Masaya Muranaka. These partnerships have contributed to the advancement of semiconductor technologies and innovations.
Conclusion
Hidetomo Aoyagi's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced semiconductor devices.