Heqing Deng

Title: Heqing Deng: Innovator in Light-Emitting Structures

Introduction

Heqing Deng is a prominent inventor based in Xiamen, China. He has made significant contributions to the field of semiconductor technology, particularly in light-emitting structures. With a total of 3 patents to his name, Deng's work has advanced the understanding and application of nitride-based semiconductor devices.

Latest Patents

Deng's latest patents include a light-emitting structure, a method for producing the light-emitting structure, and a light-emitting device. The light-emitting structure comprises an n-type layer, an active layer, and a p-type layer. The active layer features N quantum well structure periods, each containing a well layer and at least one barrier layer. Notably, the N quantum-well structure periods include a first light-emitting section and a second light-emitting section, with the first section positioned closer to the n-type layer. Additionally, he has developed a nitride-based semiconductor device with improved lattice quality, which includes a buffer layer and a three-dimensional stress tuning layer.

Career Highlights

Heqing Deng has worked with notable companies such as Xiamen San'an Optoelectronics Co., Ltd and Xiamen Sanan Optoelectronics Technology Co., Ltd. His experience in these organizations has allowed him to refine his expertise in optoelectronic devices and semiconductor technology.

Collaborations

Deng has collaborated with several professionals in his field, including Shengchang Chen and Chang-Cheng Chuo. These collaborations have contributed to the advancement of his research and innovations.

Conclusion

Heqing Deng's contributions to the field of light-emitting structures and semiconductor devices highlight his role as an influential inventor. His patents and career achievements reflect his dedication to innovation in technology.