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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10418518 B1

PDFFull Text
Date of Patent:
Sep. 17, 2019

Filed:

Dec. 30, 2017

Nitride underlayer and fabrication method thereof

Applicant:

Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;

Inventors:

Shengchang Chen, Xiamen, CN;

Wen-Yu Lin, Xiamen, CN;

Jie Zhang, Xiamen, CN;

Heqing Deng, Xiamen, CN;

Chen-Ke Hsu, Xiamen, CN;

Assignee:

XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD., Xiamen, CN;

Attorneys:

Syncoda LLC

Feng Ma

Primary Examiner:

Calvin Lee

Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 33/22 (2010.01); H01L 21/02 (2006.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02494 (2013.01); H01L 21/02631 (2013.01); H01L 33/007 (2013.01); H01L 33/22 (2013.01); H01L 33/32 (2013.01);
Abstract

A fabrication method of a nitride underlayer structure includes, during AlN layer sputtering with PVD, a small amount of non-Al material is doped to form nitride with decomposition temperature lower than that of AlN. A high-temperature annealing is then performed. After annealing, the AlN layer has a rough surface with microscopic ups and downs instead of a flat surface. By continuing AlGaN growth via MOCVD over this surface, the stress can be released via 3D-2D mode conversion, thus improving AlN cracks.

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Chen, Shengchang. (2019). Nitride underlayer and fabrication method thereof (U.S. Patent No. 10418518). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10418518

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