Xiamen Sanan Optoelectronics Technology Co., Ltd.

Xiamen San'an Optoelectronics Co., Ltd

Hubei Sanan Optoelectronics Co., Ltd.

Heqing Deng

Shengchang Chen

Chen-Ke Hsu

Jie Zhang

Wen-Yu Lin

Shuiqing Li

Chang-Cheng Chuo

Weihua Du

Chaohsu Lai

A light-emitting structure includes an n-type layer, an active layer, and a p-type layer. The active layer has N quantum well structure periods, each of the N quantum-well structure periods has a well layer and at least one barrier layer. The N quantum-well structure periods include a first light-emitting section and a second light-emitting section. The first light-emitting section is closer to the n-type layer than the second light-emitting section. A method for producing the light-emitting structure, and a light-emitting device that has the light-emitting structure are also disclosed.

Light-emitting structure, method for producing the light-emitting structure, and light-emitting device

A nitride based semiconductor device including a buffer layer, a three-dimensional stress tuning layer formed on the buffer layer, a first-type semiconductor layer formed on the three-dimensional stress tuning layer, an active layer formed on the first-type semiconductor layer, and a second-type semiconductor layer formed on the active layer. The three-dimensional stress tuning layer and the buffer layer cooperatively define an interface therebetween. The interface has a three-dimensional composition distribution.

Nitride based semiconductor device with improved lattice quality

A fabrication method of a nitride underlayer structure includes, during AlN layer sputtering with PVD, a small amount of non-Al material is doped to form nitride with decomposition temperature lower than that of AlN. A high-temperature annealing is then performed. After annealing, the AlN layer has a rough surface with microscopic ups and downs instead of a flat surface. By continuing AlGaN growth via MOCVD over this surface, the stress can be released via 3D-2D mode conversion, thus improving AlN cracks.

Nitride underlayer and fabrication method thereof

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Xiamen, China

Heqing Deng