The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Dec. 21, 2022
Applicant:

Xiamen San'an Optoelectronics Technology Co., Ltd., Xiamen, CN;

Inventors:

Shuiqing Li, Xiamen, CN;

Weihua Du, Xiamen, CN;

Chaohsu Lai, Xiamen, CN;

Heqing Deng, Xiamen, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/825 (2025.01); H10H 20/81 (2025.01); H10H 20/811 (2025.01); H10H 20/816 (2025.01);
U.S. Cl.
CPC ...
H10H 20/825 (2025.01); H10H 20/811 (2025.01); H10H 20/816 (2025.01); H10H 20/8215 (2025.01);
Abstract

A micro light-emitting diode (LED) includes an n-type layer, a transitional unit, a light-emitting unit disposed on the transitional unit, and a p-type layer disposed on the light-emitting unit. The transitional unit includes a first transitional layer, a second transitional layer and a third transitional layer that are sequentially disposed on the n-type layer in such order. The n-type layer, the first transitional layer, the second transitional layer, the third transitional layer and the light-emitting unit respectively have a bandgap of Eg, a bandgap of Eg, a bandgap of Eg, a bandgap of Egand a bandgap of Egwhich satisfy a relationship of Eg≥Eg>Eg>Eg>Eg.


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