The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2020
Filed:
May. 28, 2019
Applicant:
Xiamen San'an Optoelectronics Co., Ltd., Xiamen, CN;
Inventors:
Assignee:
Xiamen San'An Optoelectronics Co., Ltd., Fujian, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 33/325 (2013.01); H01L 33/12 (2013.01);
Abstract
A nitride based semiconductor device including a buffer layer, a three-dimensional stress tuning layer formed on the buffer layer, a first-type semiconductor layer formed on the three-dimensional stress tuning layer, an active layer formed on the first-type semiconductor layer, and a second-type semiconductor layer formed on the active layer. The three-dimensional stress tuning layer and the buffer layer cooperatively define an interface therebetween. The interface has a three-dimensional composition distribution.