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For the Inventor, By the Inventor

Gyeonggi-do, South Korea

Heon Yong Chang

USPTO Granted Patents = 45 

Average Co-Inventor Count = 1.2

ph-index = 7

Forward Citations = 316(Granted Patents)


Inventors with similar research interests:


Location History:

  • Suwon-si, KR (2011)
  • Kyoungki-do, KR (2006 - 2013)
  • Gyeonggi-do, KR (2009 - 2013)

Company Filing History:

goldMedal43 out of 6,228 
 
Hynix Semiconductor Inc.
 patents
silverMedal2 out of 11,004 
 
Skhynix Inc.
 patents

Years Active: 2006-2025

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Areas of Expertise:
Phase Change Memory
Semiconductor Wafer
Dielectric Layer
Thermal Cross-Talk
Sensing Margin
Contact Resistance
Carbon Nano Tube
Transistor Current Flow
Chip Guard
Patterning Process
Volume Change
Bit Line Sensing
45 patents (USPTO):Explore Patents
1. 12451444 - Semiconductor wafer including chip guard (2025-10-21),
2. 8486752 - Phase change memory device having dielectric layer for isolating contact structure formed by growth, semiconductor device having the same, and methods for manufacturing the devices (2013-07-16),
3. 8455329 - Phase change memory device capable of increasing sensing margin and method for manufacturing the same (2013-06-04),
4. 8450772 - Phase change RAM device and method for manufacturing the same (2013-05-28),
5. 8422283 - Phase change memory device to prevent thermal cross-talk and method for manufacturing the same (2013-04-16),
6. 8416616 - Phase change memory device and method for manufacturing the same (2013-04-09),
7. 8399285 - Phase change memory device having a bent heater and method for manufacturing the same (2013-03-19),
8. 8293650 - Phase change memory device in which a phase change layer is stably formed and prevented from lifting and method for manufacturing the same (2012-10-23),
9. 8258002 - Phase change memory device resistant to stack pattern collapse and a method for manufacturing the same (2012-09-04),
10. 8236664 - Phase change memory device accounting for volume change of phase change material and method for manufacturing the same (2012-08-07),
11. 8236602 - Phase change memory device resistant to stack pattern collapse and a method for manufacturing the same (2012-08-07),
12. 8216941 - Method for manufacturing phase change memory device (2012-07-10),
13. 8093632 - Phase change memory device accounting for volume change of phase change material and method for manufacturing the same (2012-01-10),
14. 8071968 - Phase change memory device and method for manufacturing the same (2011-12-06),
15. 8053750 - Phase change memory device having heat sinks formed under heaters and method for manufacturing the same (2011-11-08),

Title: The Innovative Journey of Heon Yong Chang

Introduction: Heon Yong Chang, a pioneering inventor hailing from Gyeonggi-do, South Korea, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Heon Yong Chang's latest patents focus on advancements in renewable energy technologies, particularly in the development of solar power systems that are more efficient and cost-effective.

Career Highlights: With a career spanning over two decades, Heon Yong Chang has established himself as a leading figure in the tech industry, holding multiple patents in the areas of clean energy, electronics, and telecommunications.

Collaborations: Throughout his career, Heon Yong Chang has collaborated with top research institutions and leading tech companies to further innovate and bring his inventions to the market, solidifying his reputation as a visionary inventor.

Conclusion: Heon Yong Chang's relentless pursuit of innovation and his passion for creating technologies that make a positive impact on society have cemented his legacy as a respected inventor in the global tech community.

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