The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2013
Filed:
Sep. 23, 2011
Heon Yong Chang, Gyeonggi-do, KR;
Heon Yong Chang, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A phase change memory device for preventing thermal cross-talk includes lower electrodes respectively formed in a plurality of phase change cell regions of a semiconductor substrate. A first insulation layer is formed on the semiconductor substrate including to the lower electrodes having holes for exposing the respective lower electrodes. Heaters are formed on the surfaces of the respective holes to contact the lower electrodes. A second insulation layer is formed to fill the holes in which the heaters are formed. A mask pattern is then formed on the first and second insulation layers, including the heaters, to have openings that expose portions of the respective heaters having a constant pitch. A phase change layer is formed on the mask pattern including the exposed portions of the heaters and the first and second insulation layers and subsequently, upper electrodes are formed on the phase change layer.