Enter inventor name

Average Co-Inventor Count = 2.2

ph-index = 13

Forward Citations = 721(Granted Patents)

Location History:

Fishkill, NY (US) (2001 - 2002)
Kyungbuk, KR (2005)
Sunnyvale, CA (US) (2001 - 2006)
Pohang-Si, KR (2005 - 2010)

Company Filing History:

23 out of 27,412

Hewlett-packard Development Company, L.P.

patents

7 out of 14,724

Infineon Technologies Ag

patents

4 out of 164,197

International Business Machines Corporation

patents

4. 3 out of 9,638

Hewlett-packard Company

patents

5. 1 out of 9,364

Lucent Technologies Inc.

patents

6. 1 out of 131,611

Samsung Electronics Co., Ltd.

patents

7. 3 out of 832,843

Other

patents

Years Active: 2001-2010

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Areas of Expertise:

Charge Trapping Structure

Magnetic Tunnel Junction

MRAM Technology

Nano-Imprinting Lithography

Phase Change Media

Vertical MOSFET

Stacked Capacitors

Self-Aligned Contacts

Atomic Resolution Storage

Silicon Carbide

High Density DRAM

Transistor Formation

42 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7709882 - Storage device with charge trapping structure and methods (2010-05-04),

2. 7522446 - Heating MRAM cells to ease state switching (2009-04-21),

3. 7259062 - Method of making a magnetic tunnel junction device (2007-08-21),

4. 7186571 - Method of fabricating a compositionally modulated electrode in a magnetic tunnel junction device (2007-03-06),

5. 7153781 - Method to etch poly Si gate stacks with raised STI structure (2006-12-26),

6. 7080596 - Micro-casted silicon carbide nano-imprinting stamp (2006-07-25),

7. 6998662 - Method of making a magnetic tunnel junction device (2006-02-14),

8. 6989327 - Forming a contact in a thin-film device (2006-01-24),

9. 6984862 - Storage device with charge trapping structure and methods (2006-01-10),

10. 6927092 - Method of forming a shared global word line MRAM structure (2005-08-09),

11. 6916511 - Method of hardening a nano-imprinting stamp (2005-07-12),

12. 6900468 - Indium chalcogenide, gallium chalcogenide, and indium-gallium chalcogenide phase-change media for ultra-high-density data-storage devices (2005-05-31),

13. 6839271 - Magnetic memory device (2005-01-04),

14. 6838339 - Area-efficient stack capacitor (2005-01-04),

15. 6759180 - Method of fabricating sub-lithographic sized line and space patterns for nano-imprinting lithography (2004-07-06),

Title: The Innovative Journey of Heon Lee

Introduction:

Heon Lee, a visionary inventor based in Sunnyvale, CA, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents:

Heon Lee's latest patents include cutting-edge advancements in artificial intelligence algorithms for autonomous vehicles, wearable health monitoring devices, and renewable energy solutions.

Career Highlights:

With a background in electrical engineering, Heon Lee has a successful track record of developing innovative solutions that have revolutionized various industries. His work has been recognized for its creativity and practicality.

Collaborations:

Throughout his career, Heon Lee has collaborated with leading tech companies, research institutions, and universities to bring his inventions to life. His ability to work in multidisciplinary teams has led to the successful implementation of his ideas.

Conclusion:

Heon Lee's passion for innovation and his dedication to pushing the boundaries of technology make him a true pioneer in the field of inventions. His work continues to inspire future generations of inventors to think outside the box and create solutions that shape the world we live in.

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