The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 31, 2005
Filed:
Feb. 20, 2001
Alison Chalken, Fremont, CA (US);
Gary Gibson, Palo Alto, CA (US);
Heon Lee, Sunnyvale, CA (US);
Krysztof Nauka, Redwood City, CA (US);
Chung-ching Yang, Saratoga, CA (US);
Alison Chalken, Fremont, CA (US);
Gary Gibson, Palo Alto, CA (US);
Heon Lee, Sunnyvale, CA (US);
Krysztof Nauka, Redwood City, CA (US);
Chung-Ching Yang, Saratoga, CA (US);
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Abstract
Ultra-high-density data-storage media employing indium chalcogenide, gallium chalcogenide, and indium-gallium chalcogenide films to form bit-storage regions that act as photoconductive, photovoltaic, or photoluminescent semiconductor devices that produce electrical signals when exposed to electromagnetic radiation, or to form bit-storage regions that act as cathodoconductive, cathodovoltaic, or cathodoluminescent semiconductor devices that produce electrical signals when exposed to electron beams. Two values of a bit are represented by two solid phases of the data-storage medium, a crystalline phase and an amorphous phase, with transition between the two phases effected by heating the bit storage region.