The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2006
Filed:
Oct. 20, 2003
Hang Liao, Corvallis, OR (US);
Zhizhang Chen, Corvallis, OR (US);
Alexander Govyadinov, Corvallis, OR (US);
Leslie Louis Szepesi, Jr., SE Salem, OR (US);
Heon Lee, Pohang-Si, KR;
Hang Liao, Corvallis, OR (US);
Zhizhang Chen, Corvallis, OR (US);
Alexander Govyadinov, Corvallis, OR (US);
Leslie Louis Szepesi, Jr., SE Salem, OR (US);
Heon Lee, Pohang-Si, KR;
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Abstract
A storage device includes a first semiconducting layer having a p-dopant and a second semiconducting layer having an n-dopant, disposed on the first semiconducting layer forming a junction between the first and the second semiconducting layers. The storage device also includes a charge trapping structure disposed on the second semiconducting layer and a conductive gate, wherein the conductive gate and the charge trapping structure move relative to the other, wherein an electric field applied across the second semiconducting layer and the conductive gate traps charge in the charge trapping structure.