logo

For the Inventor, By the Inventor

Hyogo, Japan

Heiji Kobayashi

This inventor holds 9 USPTO granted patents. Top assignees: Renesas Technology Corp., Mitsubishi Denki Kabushiki Kaisha, Mitsubishi Denki Kabushiki Kiahsa. Active years: 1995-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Heiji Kobayashi. Retrieved from https://idiyas.com/inventor/heiji-kobayashi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 9

% Patents Active = 66.7

Average Co-Inventor Count = 2.0

ph-index = 5

Forward Citations = 104(Granted Patents)


Location History:

  • Hyogo, JP (1995 - 2005)
  • Tokyo, JP (2006 - 2010)

Company Filing History:

goldMedal4 out of 3,781 
 
Renesas Technology Corp.
 patents
silverMedal3 out of 21,351 
 
Mitsubishi Denki Kabushiki Kaisha
 patents
bronzeMedal1 out of 1 
 
Mitsubishi Denki Kabushiki Kiahsa
 patent
4. 1 out of 52 
 
Ryoden Semiconductor System Engineering Corporation
 patents
5. 1 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 1995-2010

Loading Chart...
9 patents (USPTO):Explore Patents
1. 7691713 - Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film (2010-04-06),
2. 7244655 - Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film (2007-07-17),
3. 6998319 - Method of manufacturing semiconductor device capable of suppressing impurity concentration reduction in doped channel region arising from formation of gate insulating film (2006-02-14),
4. 6864580 - Semiconductor device and method of manufacturing the same (2005-03-08),
5. 6815265 - Method of fabricating a semiconductor device with a passivation film (2004-11-09),
6. 6483192 - Semiconductor device and method of manufacturing the same (2002-11-19),
7. 6229172 - Semiconductor device and manufacturing method thereof (2001-05-08),
8. 6215187 - Semiconductor device and manufacturing method thereof (2001-04-10),
9. 5478759 - Method of manufacturing semiconductor device with retrograde wells (1995-12-26),

Title: Inventor Heiji Kobayashi

Introduction: Heiji Kobayashi is a renowned inventor based in Hyogo, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Heiji Kobayashi holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his continuous commitment to pushing the boundaries of technological advancements.

Career Highlights: With a career spanning over two decades, Heiji Kobayashi has worked with leading research institutions and technology companies, playing a pivotal role in developing cutting-edge solutions that have revolutionized various industries.

Collaborations: Throughout his career, Heiji Kobayashi has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge sharing that has led to the successful implementation of numerous groundbreaking projects.

Conclusion: Heiji Kobayashi's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor, shaping the future of technology and inspiring generations to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…