The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2001

Filed:

Nov. 16, 1998
Applicant:
Inventor:

Heiji Kobayashi, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/972 ;
U.S. Cl.
CPC ...
H01L 2/972 ;
Abstract

A semiconductor device having a gentle step between a memory cell array region and a peripheral region is provided, in which the resist at this portion can be prevented from being reduced in thickness. The semiconductor device includes a memory cell block having a plurality of capacitors and formed on the main surface of a silicon substrate. An outer surface of the end portion of the capacitor in the memory cell block has an upper surface extending at a first height above the main surface of the silicon substrate, and contiguous with the upper surface, a bottom surface extending at a second height lower than the first height above the main surface of the silicon substrate.


Find Patent Forward Citations

Loading…