The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2001
Filed:
Sep. 21, 1999
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device and manufacturing method thereof attaining higher capacitor capacitance and lower power consumption are provided. On an interlayer oxide film which is a BPTEOS film containing an impurity, an interlayer oxide film which is a TEOS film not containing any impurity is formed. Openings of approximately inverted frusto-conical shape of approximately the same size are formed in interlayer oxide films, respectively, providing a contact hole of such a shape that includes two inverted frusto-cones continued in the vertical direction as a whole is provided. Along the inner wall surface of the contact hole, a storage electrode, a dielectric film and a cell plate electrode constituting a capacitor are formed successively.