Hee-Sung Kang

This inventor holds 24 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2002-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hee-Sung Kang. Retrieved from https://idiyas.com/inventor/hee-sung-kang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 24

% Patents Active = 70.8

Average Co-Inventor Count = 3.1

ph-index = 7

Forward Citations = 303(Granted Patents)

Location History:

Sungnam, KR (2004)
Songnam, KR (2004 - 2005)
Sungnam-shi, KR (2002 - 2008)
Kyunggi-do, KR (2003 - 2008)
Sungnam-si, KR (2006 - 2015)
Seongnam-si, KR (2007 - 2015)

Company Filing History:

24 out of 132,108

Samsung Electronics Co., Ltd.

patents

Years Active: 2002-2015

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Areas of Expertise:

Semiconductor Device

Gate Electrode Structures

Floating Body Effect

Static Random Access Memory

CMOS Transistor

Fabrication Method

Decoupling Capacitors

Dummy Transistors

Alignment Mark

SOI MOSFETs

Notched Gate Electrodes

Junction Diode

24 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9111880 - Method of forming a pattern in a semiconductor device and method of forming a gate using the same (2015-08-18),

2. 8952423 - Semiconductor device having decoupling capacitors and dummy transistors (2015-02-10),

3. 8846304 - Method of forming a pattern in a semiconductor device and method of forming a gate using the same (2014-09-30),

4. 8409787 - Method of forming a pattern in a semiconductor device and method of forming a gate using the same (2013-04-02),

5. 8114730 - Shared contact structure, semiconductor device and method of fabricating the semiconductor device (2012-02-14),

6. 7914973 - Method of forming a pattern in a semiconductor device and method of forming a gate using the same (2011-03-29),

7. 7781282 - Shared contact structure, semiconductor device and method of fabricating the semiconductor device (2010-08-24),

8. 7410843 - Methods for fabricating reduced floating body effect static random access memory cells (2008-08-12),

9. 7364987 - Method for manufacturing semiconductor device (2008-04-29),

10. 7348636 - CMOS transistor having different PMOS and NMOS gate electrode structures and method of fabrication thereof (2008-03-25),

11. 7338885 - Alignment mark and method for manufacturing a semiconductor device having the same (2008-03-04),

12. 7285831 - CMOS device with improved performance and method of fabricating the same (2007-10-23),

13. 7179714 - Method of fabricating MOS transistor having fully silicided gate (2007-02-20),

14. 7105900 - Reduced floating body effect static random access memory cells and methods for fabricating the same (2006-09-12),

15. 7045429 - Method of manufacturing a semiconductor device (2006-05-16),

Title: Inventor Hee-Sung Kang: Pioneering Innovations in Sungnam-si, KR

Introduction: Hee-Sung Kang is a visionary inventor hailing from Sungnam-si, South Korea, known for her groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hee-Sung Kang holds several patents in the realm of artificial intelligence, robotics, and sustainable energy solutions, showcasing her commitment to creating a more advanced and sustainable future.

Career Highlights: With a career spanning over two decades, Hee-Sung Kang has worked with leading tech companies and research institutions, spearheading projects that have revolutionized industries and improved the quality of life for many.

Collaborations: Throughout her career, Hee-Sung Kang has collaborated with top engineers, scientists, and designers, fostering a culture of innovation and excellence in all her projects. Her ability to work in multidisciplinary teams has led to the development of cutting-edge technologies.

Conclusion: Hee-Sung Kang's passion for innovation, coupled with her relentless drive to push the boundaries of what is possible, has solidified her reputation as a trailblazer in the world of technology. Her work continues to inspire future generations of inventors and innovators.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]