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For the Inventor, By the Inventor

Sungnam-si, South Korea

Hee-Sung Kang

USPTO Granted Patents = 24

Average Co-Inventor Count = 3.1

ph-index = 7

Forward Citations = 301(Granted Patents)


Location History:

  • Sungnam, KR (2004)
  • Songnam, KR (2004 - 2005)
  • Sungnam-shi, KR (2002 - 2008)
  • Kyunggi-do, KR (2003 - 2008)
  • Sungnam-si, KR (2006 - 2015)
  • Seongnam-si, KR (2007 - 2015)

Company Filing History:

goldMedal24 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2002-2015

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24 patents (USPTO):Explore Patents
1. 9111880 - Method of forming a pattern in a semiconductor device and method of forming a gate using the same (2015-08-18),
2. 8952423 - Semiconductor device having decoupling capacitors and dummy transistors (2015-02-10),
3. 8846304 - Method of forming a pattern in a semiconductor device and method of forming a gate using the same (2014-09-30),
4. 8409787 - Method of forming a pattern in a semiconductor device and method of forming a gate using the same (2013-04-02),
5. 8114730 - Shared contact structure, semiconductor device and method of fabricating the semiconductor device (2012-02-14),
6. 7914973 - Method of forming a pattern in a semiconductor device and method of forming a gate using the same (2011-03-29),
7. 7781282 - Shared contact structure, semiconductor device and method of fabricating the semiconductor device (2010-08-24),
8. 7410843 - Methods for fabricating reduced floating body effect static random access memory cells (2008-08-12),
9. 7364987 - Method for manufacturing semiconductor device (2008-04-29),
10. 7348636 - CMOS transistor having different PMOS and NMOS gate electrode structures and method of fabrication thereof (2008-03-25),
11. 7338885 - Alignment mark and method for manufacturing a semiconductor device having the same (2008-03-04),
12. 7285831 - CMOS device with improved performance and method of fabricating the same (2007-10-23),
13. 7179714 - Method of fabricating MOS transistor having fully silicided gate (2007-02-20),
14. 7105900 - Reduced floating body effect static random access memory cells and methods for fabricating the same (2006-09-12),
15. 7045429 - Method of manufacturing a semiconductor device (2006-05-16),

Title: Inventor Hee-Sung Kang: Pioneering Innovations in Sungnam-si, KR

Introduction: Hee-Sung Kang is a visionary inventor hailing from Sungnam-si, South Korea, known for her groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hee-Sung Kang holds several patents in the realm of artificial intelligence, robotics, and sustainable energy solutions, showcasing her commitment to creating a more advanced and sustainable future.

Career Highlights: With a career spanning over two decades, Hee-Sung Kang has worked with leading tech companies and research institutions, spearheading projects that have revolutionized industries and improved the quality of life for many.

Collaborations: Throughout her career, Hee-Sung Kang has collaborated with top engineers, scientists, and designers, fostering a culture of innovation and excellence in all her projects. Her ability to work in multidisciplinary teams has led to the development of cutting-edge technologies.

Conclusion: Hee-Sung Kang's passion for innovation, coupled with her relentless drive to push the boundaries of what is possible, has solidified her reputation as a trailblazer in the world of technology. Her work continues to inspire future generations of inventors and innovators.

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