The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2007
Filed:
Jul. 12, 2005
Mu-kyeng Jung, Suwon-si, KR;
Hee-sung Kang, Seongnam-si, KR;
Hyuk-ju Ryu, Seoul, KR;
Woo-young Chung, Seongnam-si, KR;
Kyung-soo Kim, Seongnam-si, KR;
Mu-kyeng Jung, Suwon-si, KR;
Hee-sung Kang, Seongnam-si, KR;
Hyuk-ju Ryu, Seoul, KR;
Woo-young Chung, Seongnam-si, KR;
Kyung-soo Kim, Seongnam-si, KR;
Abstract
A complementary metal oxide semiconductor (CMOS) device having improved performance includes a first device active region including at least one pair of transistor active regions wherein one transistor active region has a first width and the other transistor active region for forming a contact has a second width, a first gate arranged on the first device active region, a MOS transistor of a first conductivity type including a source/drain region of the first conductivity type formed in the first device active region, a second device active region having a third width greater than the first width, a second gate arranged on the second device active region, and a MOS transistor of a second conductivity type including a source/drain region of the second conductivity type formed in the second device active region.