The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2008
Filed:
Jan. 14, 2005
Applicants:
Ki-seog Youn, Suwon-si, KR;
Jong-hyon Ahn, Suwon-si, KR;
Hee-sung Kang, Sungnam-si, KR;
Tae-woong Kang, Suwon-si, KR;
Inventors:
Ki-Seog Youn, Suwon-si, KR;
Jong-Hyon Ahn, Suwon-si, KR;
Hee-Sung Kang, Sungnam-si, KR;
Tae-Woong Kang, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonngi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a method of forming a semiconductor device, a copper diffusion-prevention layer is formed underneath a substrate. Impurity regions are formed on the surface of the substrate. A copper wiring is electrically connected to the impurity regions. The copper diffusion-prevention layer is formed before forming the lightly doped source/drain regions to prevent copper atoms from diffusing into the substrate.