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For the Inventor, By the Inventor

Nara, Japan

Haruhisa Takiguchi

This inventor holds 55 USPTO granted patents, primarily in Semiconductor Lasers (CPC class 372 ). Top assignees: Sharp Kabushiki Kaisha Corporation, Optoelectronics Technology Research Laboratory, Yamaguchi University. Active years: 1987-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Haruhisa Takiguchi. Retrieved from https://idiyas.com/inventor/haruhisa-takiguchi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 55

% Patents Active = 96.4

Average Co-Inventor Count = 4.1

ph-index = 13

Forward Citations = 581(Granted Patents)

Forward Citations (Not Self Cited) = 564(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Tenri, JP (1989 - 1990)
  • Kashiwa, JP (2000)
  • Chiba, JP (2002 - 2003)
  • Nara, JP (1987 - 2008)
  • Osaka, JP (1987 - 2016)

Company Filing History:

goldMedal55 out of 25,949 
 
Sharp Kabushiki Kaisha Corporation
 patents
silverMedal2 out of 3 
 
Optoelectronics Technology Research Laboratory
 patents
bronzeMedal1 out of 89 
 
Yamaguchi University
 patents
where one patent can have more than one assignee

Years Active: 1987-2016

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Areas of Expertise:
Nitride Semiconductor
Light-Emitting Device
Quantum Wire
Optical Coupling
Distributed Feedback
Doped Semiconductor
Dark Field Projection
Diffraction Grating
Optical Heterodyne
Semiconductor Device
Multi-Layered Dielectric
Light Modulator
55 patents (USPTO):Explore Patents
1. 9293647 - Nitride semiconductor light-emitting device and method of manufacturing the same (2016-03-22),
2. 8963165 - Nitride semiconductor structure, nitride semiconductor light emitting element, nitride semiconductor transistor element, method of manufacturing nitride semiconductor structure, and method of manufacturing nitride semiconductor element (2015-02-24),
3. 7349154 - Reflection type screen (2008-03-25),
4. 6653248 - Doped semiconductor material, a method of manufacturing the doped semiconductor material, and a semiconductor device (2003-11-25),
5. 6426522 - Doped semiconductor material, a method of manufacturing the doped semiconductor material, and a semiconductor device (2002-07-30),
6. 6155688 - Dark field projection display (2000-12-05),
7. 5654557 - Quantum wire structure and a method for producing the same (1997-08-05),
8. 5477319 - Optical heterodyne detection method and apparatus utilizing a scattered (1995-12-19),
9. 5473173 - Quantum well structure having differentially strained quantum well layers (1995-12-05),
10. 5457561 - System for transmitting a beam in the air (1995-10-10),
11. 5403916 - Method for producing a light emitting diode having transparent substrate (1995-04-04),
12. 5361271 - Semiconductor laser (1994-11-01),
13. 5345460 - Semiconductor laser device with window regions (1994-09-06),
14. 5335241 - Buried stripe type semiconductor laser device (1994-08-02),
15. 5309472 - Semiconductor device and a method for producing the same (1994-05-03),

Title: Haruhisa Takiguchi: A Pioneer in Nitride Semiconductor Technology

Introduction

Haruhisa Takiguchi is a prominent inventor based in Nara, Japan, with an impressive portfolio of 55 patents. His innovative work primarily focuses on the development and manufacturing of nitride semiconductor devices, which are crucial for advancing modern electronic and optoelectronic applications.

Latest Patents

Among his most recent patents, Takiguchi has made significant strides in creating a nitride semiconductor light-emitting device and method of manufacturing the same. This patented device consists of an n-type nitride semiconductor layer, a trigger layer, a V-pit expanding layer, a light-emitting layer, and a p-type nitride semiconductor layer arranged in sequence. The light-emitting layer features a specially formed V-pit, enhancing the efficiency of light emission. Additionally, he has developed a comprehensive nitride semiconductor structure that incorporates various semiconductor elements and manufacturing methodologies, further exemplifying his expertise in this field.

Career Highlights

Throughout his career, Haruhisa Takiguchi has been associated with notable organizations such as Sharp Corporation and Optoelectronics Technology Research Laboratory. His work in these esteemed companies has played a pivotal role in promoting advancements in semiconductor technology.

Collaborations

Takiguchi has collaborated with several accomplished professionals in his field, including Shinji Kaneiwa and Hiroaki Kudo. These partnerships have allowed for a shared exchange of ideas and expertise, contributing to the evolution of nitride semiconductor technology and its applications.

Conclusion

Haruhisa Takiguchi's contributions to the field of nitride semiconductors have positioned him as a key figure in electronic and optoelectronic innovation. With a robust portfolio of patents and fruitful collaborations, his work continues to influence the landscape of semiconductor research and development.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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