Sharp Kabushiki Kaisha Corporation

Optoelectronics Technology Research Laboratory

Yamaguchi University

Haruhisa Takiguchi

Shinji Kaneiwa

Hiroaki Kudo

Sadayoshi Matsui

Toshihiko Yoshida

Mototaka Taneya

Satoshi Sugahara

Kazuhiko Inoguchi

Toshiyuki Okumura

Seiki Yano

Chitose Nakanishi

Chitose Sakane

Osamu Yamamoto

Fumihiro Konushi

Hidenori Kawanishi

Hiroshi Hayashi

Tatsuya Morioka

Nobuyuki Miyauchi

Atsushi Shimonaka

Alistair Henderson Kean

Michael Geraint Robinson

Masanori Watanabe

Saburo Yamamoto

Mitsuhiro Matsumoto

Hiroshi Nakatsu

Hiroyuki Hosoba

Atsushi Ogawa

Akinori Seki

Masahiro Araki

Nicholas Mayhew

Duncan James Anderson

Geoffrey Duggan

Shinya Yoshida

Takao Kinoshita

Takao Abumi

Jason Kempton Slack

Robert George Brown

Toshiki Hijikata

Masayuki Hoteida

Martin David Dawson

Hiroyuki Kashihara

Tohru Murata

Narihito Okada

Kazuyuki Tadatomo

Hiroshi Nakatu

Tomoyuki Aiura

Shuichi Yoshinaka

Kousei Takahashi

Takeshi Funaki

A nitride semiconductor light-emitting device is formed of an n-type nitride semiconductor layer, a trigger layer, a V-pit expanding layer, a light-emitting layer, and a p-type nitride semiconductor layer provided in this order. The light-emitting layer has a V-pit formed therein. The trigger layer is made of a nitride semiconductor material having a lattice constant different from that of a material that forms an upper surface of the n-type nitride semiconductor layer. The V-pit expanding layer is made of a nitride semiconductor material having a lattice constant substantially identical to that of the material that forms the upper surface of the n-type nitride semiconductor layer, and the V-pit expanding layer has a thickness of 5 nm or more and 5000 nm or less.

Nitride semiconductor light-emitting device and method of manufacturing the same

A nitride semiconductor structure in which a first nitride semiconductor underlying layer is provided on a substrate having a recess portion and a projection portion provided between the recess portions at a surface thereof, the first nitride semiconductor underlying layer has at least 6 first oblique facet planes surrounding the projection portion on an outer side of the projection portion, and a second nitride semiconductor underlying layer buries the first oblique facet planes, a nitride semiconductor light emitting element, a nitride semiconductor transistor element, a method of manufacturing a nitride semiconductor structure, and a method of manufacturing a nitride semiconductor element are provided.

Nitride semiconductor structure, nitride semiconductor light emitting element, nitride semiconductor transistor element, method of manufacturing nitride semiconductor structure, and method of manufacturing nitride semiconductor element

The reflection type screen comprises a reflection layer which is disposed on the opposite side to the projected light incident side of the screen, a horizontal view angle increasing layer which is disposed on the light incident side of the reflection layer, and a diffusion layer which is disposed on the light incident side of the horizontal view angle increasing layer. The horizontal view angle increasing layer has an array of convex ridges which are raised in a rear direction of the screen. Since the longitudinal direction of the ridges is aligned with the vertical direction of the screen, the view angle characteristics of the screen in a horizontal direction are improved and the diffusion characteristics of the screen in a vertical direction can be suppressed for preventing external disturbing light from an upper illumination light from being reflected toward the observers.

Reflection type screen

A semiconductor layer is co-doped with two dopants. The first dopant is to generate charge carriers in the semiconductor material, and the second dopant is to promote atomic disorder within the material. When the semiconductor material is annealed, the second dopant becomes mobile and moves through the lattice so as to promote atomic disorder. This eliminates unwanted effects such as, for example, a reduction in the forbidden bandgap that can otherwise arise as a result of atomic ordering. The amount of diffusion of the second dopant during the annealing can be increased by making the initial concentration of the second dopant non-uniform over the volume of the semiconductor material.

Doped semiconductor material, a method of manufacturing the doped semiconductor material, and a semiconductor device

A dark field projection display includes a light source, a spatial light modulator, and an optical system for directing light from the light source onto the spatial light modulator. The optical system includes a plurality of optical subsystems and a plurality of reflectors. Each of the optical subsystems has an input aperture and is arranged to image light from the light source, the subsystems forming a spatial distribution of source images whose relative positions are different from the relative positions of the input apertures. Each of the optical subsystems further includes a plurality of reflectors disposed at the relative positions of the source images. Each of the reflectors is arranged to reflect light from a respective one of the subsystems onto the spatial light modulator.

Dark field projection display

A quantum wire structure includes a first layer having a thickness sufficiently smaller than a de Broglie wavelength of an electron wave in a medium, a second layer and a third layer which are disposed on and under the first layer and respectively have a forbidden band width larger than that of the first layer, wherein the first layer has a region with a relatively small curvature and a region with a relatively large curvature in its cross-section, and a width of the region with a relatively small curvature is 50 nm or less.

Quantum wire structure and a method for producing the same

An optical heterodyne detection method of detecting a beat signal by heterodyne detection using a superimposition of two or more beams of light including a signal beam and a reference beam, includes the steps of: generating a scattered reference beam from the reference beam: and detecting the beat signal obtained from the scattered reference beam and the signal beam, by superimposing the scattered reference beam and the signal beam.

Optical heterodyne detection method and apparatus utilizing a scattered

A quantum well structure is provided which is capable of efficiently confining electrons and holes in a quantum well layer. The quantum well structure includes a first cladding layer, a second cladding layer, and a plurality of quantum well layers and one or more barrier layers each disposed between the first cladding layer and the second cladding layer. The quantum well layers and the barrier layers are laminated in an alternating manner. The quantum well layers include at least two selected from the group consisting of a layer having tensile strain, a layer having no strain, and a layer having compressive strain. The thickness of each of the quantum well layers is selected so that the energy difference in each of the quantum well layers between the ground quantum state of an electron at the conduction band and the ground quantum state of a hole at the valence band is substantially the same.

Quantum well structure having differentially strained quantum well layers

A system for transmitting information with a coherent beam being propagatable in the air is arranged to include a transmitting device having a modulator and an emitting circuit and a receiving device having a generator, a mixer, a frequency discriminating circuit, and reproducing circuit. The modulator modulates a reference light frequency (wavelength) or phase of a coherent beam to be emitted from a light source according to the signal. The emitting circuit emits the modulated beam as a divergent beam having such a power density as being safe to human eyes. The generator generates a coherent locally oscillated beam. The mixer mixes the signal beam with the locally oscillated beam and photoelectric-converts the mixed beam. The frequency discriminating circuit frequency-discriminates the a.c. component of the photoelectric-converted output. The reproducing circuit reproduces a signal from the output of frequency discriminating circuit. Any one of the transmitting device and the receiving device has a function of keeping a relative light frequency difference (wavelength difference) between the signal beam and the locally oscillated beam constant.

System for transmitting a beam in the air

A method for producing a light emitting diode includes the steps of: forming a first semiconductor multilayer on a first semiconductor substrate having a first conductivity type; forming a light emitting layer on the first semiconductor multilayer; forming a second semiconductor multilayer; disposing a second substrate which is transparent to light emitted from the light emitting layer on the second semiconductor multilayer; and bonding the second substrate and the second semiconductor multilayer through direct bonding with heating a vicinity of an interface between the second substrate and the second semiconductor multilayer.

Method for producing a light emitting diode having transparent substrate

A semiconductor laser of the present invention includes: a semiconductor substrate, a multi-layered structure formed on the semiconductor substrate and a current and light confining section formed on the multi-layered structure, wherein the current and light confining section includes at least two multi-layered current and light confining portions each having a laser beam transmission layer and a laser beam absorption layer formed on the laser beam transmission layer, and at least one stripe groove which spatially separates the at least two current and light confining portions; wherein an equivalent refractive index in the multi-layered current and light confining portions with respect to a laser beam in a fundamental transverse mode is made smaller than that within the stripe groove; wherein the multi-layered structure includes an active layer, and the active layer has a region positioned below the stripe groove of the current and light confining section and regions positioned below a respective one of the multi-layered current and light confining portions; and wherein a optical confinement factor .GAMMA. of the active layer outside the stripe groove with respect to a laser beam in a guide mode is larger than that outside the stripe groove with respect to a laser beam in an anti-guide mode.

Semiconductor laser

A semiconductor laser device with window regions according to the present invention is provided, in which a double hetero structure including cladding layers and an active layer sandwiched by the cladding layers is formed on a semiconductor substrate, the double hetero structure is buried in burying layers with a bandgap larger than that of the active layer, and the burying layers form window regions situated at both end facets of the double hetero structure, wherein the window regions have a waveguide structure including a plurality of semiconductor layers with different bandgaps.

Semiconductor laser device with window regions

A buried stripe type semiconductor laser device having a mesa stripe whose side faces are {111} facets and having a current confinement structure under epitaxial layers burying the mesa stripe is disclosed. The buried stripe type semiconductor laser device comprises a (100) semiconductor substrate having a stripe-shaped ridge in the &lt;011&gt; direction, a multi-layer film of a double hetero structure formed on the upper surface of the stripe-shaped ridge. The mutil-layer film includes a laser oscillating active layer of a smaller width than that of the stripe-shaped ridge. The current confinement means are formed at both sides of the mesa stripe on the semiconductor substrate. In addition, a method of fabricating a buried stripe type semiconductor laser device having no raised portion above a mesa stripe of a substrate is disclosed. The laser device can be mounted in position with the epitaxial layer side down, without the mesa stripe being damaged or strained.

Buried stripe type semiconductor laser device

A semiconductor device includes a multiple layer structure including a substantially flat active layer, and a first semiconductor layer and a second semiconductor layer adjacent to each other, the semiconductor layers having a corrugation at an interface therebetween; and a generating device which is connected to the multiple layer structure. An electromagnetic field intensity distribution is generated by use of the generating device in a waveguide region including the active layer, and the active layer includes a gain distribution having a distribution pattern corresponding to the corrugation. The multiple layer structure is produced by forming the corrugation on an upper surface of the first semiconductor layer, and forming the rest of the multiple layer structure including the second semiconductor layer and the active layer by using a vapor phase growth method once so as to make the active layer substantially flat. Then, the generating device is formed to be in contact with the multiple layer structure.

Semiconductor device and a method for producing the same

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Nara, Japan

Haruhisa Takiguchi