The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Dec. 21, 2011
Masahiro Araki, Osaka, JP;
Shinya Yoshida, Osaka, JP;
Haruhisa Takiguchi, Osaka, JP;
Atsushi Ogawa, Osaka, JP;
Takao Kinoshita, Osaka, JP;
Tohru Murata, Osaka, JP;
Takeshi Funaki, Osaka, JP;
Masayuki Hoteida, Osaka, JP;
Masahiro Araki, Osaka, JP;
Shinya Yoshida, Osaka, JP;
Haruhisa Takiguchi, Osaka, JP;
Atsushi Ogawa, Osaka, JP;
Takao Kinoshita, Osaka, JP;
Tohru Murata, Osaka, JP;
Takeshi Funaki, Osaka, JP;
Masayuki Hoteida, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A nitride semiconductor structure in which a first nitride semiconductor underlying layer is provided on a substrate having a recess portion and a projection portion provided between the recess portions at a surface thereof, the first nitride semiconductor underlying layer has at least 6 first oblique facet planes surrounding the projection portion on an outer side of the projection portion, and a second nitride semiconductor underlying layer buries the first oblique facet planes, a nitride semiconductor light emitting element, a nitride semiconductor transistor element, a method of manufacturing a nitride semiconductor structure, and a method of manufacturing a nitride semiconductor element are provided.