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Years Active: 2015-2024
Title: Masayuki Hoteida: Innovator in Group-III Nitride Crystal Manufacturing
Introduction
Masayuki Hoteida is a prominent inventor based in Osaka, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of Group-III nitride crystals. With a total of four patents to his name, Hoteida's work has advanced the capabilities of crystal production and semiconductor applications.
Latest Patents
Hoteida's latest patents include a manufacturing apparatus for a Group-III nitride crystal. This apparatus features a raw material chamber and a nurturing chamber where a Group-III element oxide gas and a nitrogen element-containing gas react to produce a Group-III nitride crystal on a seed substrate. The design incorporates specific parameters, such as the angle θ and various distances and diameters, to optimize the production process. Another notable patent involves an apparatus for producing Group-III nitride semiconductor crystals, which includes nitrogen source nozzles with different spray directions. This innovative design allows for the effective mixing of gases, enhancing the quality of the semiconductor crystals produced.
Career Highlights
Throughout his career, Hoteida has worked with leading companies in the technology sector. He has been associated with Sharp Corporation and Panasonic Holdings Corporation, where he has contributed to various projects related to semiconductor manufacturing. His expertise in this field has positioned him as a key figure in advancing semiconductor technology.
Collaborations
Hoteida has collaborated with notable colleagues, including Junichi Takino and Shunichi Matsuno. These partnerships have fostered innovation and have led to the development of advanced technologies in the semiconductor industry.
Conclusion
Masayuki Hoteida's contributions to the field of semiconductor technology through his innovative patents and collaborations have significantly impacted the industry. His work continues to influence the manufacturing processes of Group-III nitride crystals, paving the way for future advancements in semiconductor applications.