The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2026

Filed:

Apr. 21, 2022
Applicant:

Panasonic Holdings Corporation, Osaka, JP;

Inventors:

Yusuke Mori, Suita, JP;

Masashi Yoshimura, Suita, JP;

Masayuki Imanishi, Suita, JP;

Shigeyoshi Usami, Suita, JP;

Akira Kitamoto, Suita, JP;

Junichi Takino, Osaka, JP;

Masayuki Hoteida, Osaka, JP;

Shunichi Matsuno, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 35/00 (2006.01); C30B 25/02 (2006.01); C30B 29/38 (2006.01);
U.S. Cl.
CPC ...
C30B 29/38 (2013.01); C30B 25/02 (2013.01); C30B 35/00 (2013.01);
Abstract

A group III nitride crystal manufacturing apparatus includes a raw material chamber generating a group III elemental oxide gas, and a growth chamber allowing the group III element oxide gas supplied from the raw material chamber to react with a nitrogen element-containing gas to generate a group III nitride crystal on a seed substrate, and the growth chamber incudes a decomposition promoting part promoting decomposition of the unreacted nitrogen element-containing gas between the seed substrate and an exhaust port for discharging the unreacted group III oxide gas and the nitrogen element-containing gas.


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