The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Dec. 05, 2012
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Yamaguchi University, Yamaguchi-shi, Yamaguchi, JP;
Hiroyuki Kashihara, Ube, JP;
Narihito Okada, Ube, JP;
Kazuyuki Tadatomo, Ube, JP;
Haruhisa Takiguchi, Osaka, JP;
SHARP KABUSHIKI KAISHA, Osaka-Shi, JP;
YAMAGUCHI UNIVERSITY, Yamaguchi-Shi, JP;
Abstract
A nitride semiconductor light-emitting device is formed of an n-type nitride semiconductor layer, a trigger layer, a V-pit expanding layer, a light-emitting layer, and a p-type nitride semiconductor layer provided in this order. The light-emitting layer has a V-pit formed therein. The trigger layer is made of a nitride semiconductor material having a lattice constant different from that of a material that forms an upper surface of the n-type nitride semiconductor layer. The V-pit expanding layer is made of a nitride semiconductor material having a lattice constant substantially identical to that of the material that forms the upper surface of the n-type nitride semiconductor layer, and the V-pit expanding layer has a thickness of 5 nm or more and 5000 nm or less.