Ube, Japan

Narihito Okada

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignees: Yamaguchi University, Sharp Kabushiki Kaisha Corporation. Active years: 2013-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Narihito Okada. Retrieved from https://idiyas.com/inventor/narihito-okada

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

Average Co-Inventor Count = 2.7

ph-index = 2

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 2013-2016

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2 patents (USPTO):Explore Patents

Title: Narihito Okada: Innovator in Nitride Semiconductor Technology

Introduction

Narihito Okada is a prominent inventor based in Ube, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of nitride semiconductor light-emitting devices. With a total of 2 patents, his work has advanced the efficiency and effectiveness of light-emitting devices.

Latest Patents

One of Okada's latest patents is for a nitride semiconductor light-emitting device and method of manufacturing the same. This invention involves a structure that includes an n-type nitride semiconductor layer, a trigger layer, a V-pit expanding layer, a light-emitting layer, and a p-type nitride semiconductor layer arranged in a specific order. The light-emitting layer features a V-pit, and the trigger layer is composed of a nitride semiconductor material with a lattice constant that differs from that of the n-type layer's upper surface. The V-pit expanding layer, which has a thickness ranging from 5 nm to 5000 nm, is made of a nitride semiconductor material with a lattice constant that closely matches that of the n-type layer.

Another significant patent involves a method for forming a sapphire substrate and semiconductor device. This invention provides a sapphire substrate that enhances the light-extraction efficiency of the semiconductor device. The method includes creating a surface with random projections on the sapphire substrate, followed by the growth of a GaN layer and additional layers to fabricate a semiconductor light-emitting device.

Career Highlights

Throughout his career, Narihito Okada has worked with esteemed institutions such as Yamaguchi University and Sharp Corporation. His experience in these organizations has allowed him to refine his expertise in semiconductor technology and contribute to groundbreaking innovations.

Collaborations

Okada has collaborated with notable colleagues, including Kazuyuki Tadatomo and Hiroyuki Kashihara. These partnerships have fostered a collaborative environment that has led to advancements in their respective fields.

Conclusion

Narihito Okada's contributions to nitride semiconductor technology have positioned him as a key figure in the industry. His innovative patents and collaborations reflect his commitment to advancing semiconductor devices, particularly in enhancing light-emitting efficiency.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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