The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8384111 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 26, 2013

Filed:

Feb. 09, 2010
Applicants:

Kazuyuki Tadatomo, Ube, JP;

Narihito Okada, Ube, JP;

Inventors:

Kazuyuki Tadatomo, Ube, JP;

Narihito Okada, Ube, JP;

Assignee:

Yamaguchi University, Yamaguchi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract

In a semiconductor device fabricated by growing a compound semiconductor layer on a sapphire substrate, a sapphire substrate enabling the semiconductor device to have a high light-extraction efficiency is provided. A plurality of projections, . . . are provided at random on a surface of a sapphire substrate, and a GaN layeris grown on this surface. Then, a multi-quantum well layer, a p-AlGaN layer, a p-GaN layer, and an ITO layerare formed on the GaN layer, and two electrodesandare also formed. In this manner, a semiconductor light-emitting device is fabricated.


Find Patent Forward Citations

Tadatomo, Kazuyuki. (2013). Method for forming sapphire substrate and semiconductor device (U.S. Patent No. 8384111). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8384111

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